PZTA92

PZTA92 PNP Silicon High Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: PZTA42 (NPN) 4 3 2 1 VPS05163 Type PZTA92 Maximum Ratings Parameter Marking PZTA 92 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 5 500 100 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point 1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-12-2001 PZTA92 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics VBEsat VCEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 300 300 5 - - 250 20 100 V nA µA nA - 25 40 25 ...