Document
PNP Silicon Darlington Transistors
PZTA 63 PZTA 64
For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN)
q
Type PZTA 63 PZTA 64
Marking PZTA 63 PZTA 64
Ordering Code (tape and reel) Q62702-Z2031 Q62702-Z2032
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 30 30 10 500 800 100 200 1.5 150 – 65 … + 150
Unit V
mA
W ˚C
72 17
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
PZTA 63 PZTA 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V PZTA 63 PZTA 64 PZTA 63 PZTA 64 VCEsat VBEsat V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 – – IEB0 hFE 5000 10000 10000 20000 – – – – – – – – – – – – 1.5 2.0 V – – – – 100 10 100 nA µA nA – 30 30 10 – – – – – – V Values typ. max. Unit
Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
125
–
–
MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
PZTA 63 PZTA 64
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz
Permissible pulse load Ptot max / Ptot DC = f (tp)
DC current gain hFE = f (IC) VCE = 5 V
Semiconductor Group
3
PZTA 63 PZTA 64
Collector-emitter saturation voltage IC = f (VCE sat) hFE = 1000
Base-emitter saturation voltage IC = f (VBE sat) hFE = 1000
Collector cutoff current ICB0 = f (TA) VCE = 30 V
Semiconductor Group
4
.