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PZTA63 Dataheets PDF



Part Number PZTA63
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon Darlington Transistors
Datasheet PZTA63 DatasheetPZTA63 Datasheet (PDF)

PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN) q Type PZTA 63 PZTA 64 Marking PZTA 63 PZTA 64 Ordering Code (tape and reel) Q62702-Z2031 Q62702-Z2032 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current.

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PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN) q Type PZTA 63 PZTA 64 Marking PZTA 63 PZTA 64 Ordering Code (tape and reel) Q62702-Z2031 Q62702-Z2032 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 30 30 10 500 800 100 200 1.5 150 – 65 … + 150 Unit V mA W ˚C 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 63 PZTA 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V PZTA 63 PZTA 64 PZTA 63 PZTA 64 VCEsat VBEsat V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 – – IEB0 hFE 5000 10000 10000 20000 – – – – – – – – – – – – 1.5 2.0 V – – – – 100 10 100 nA µA nA – 30 30 10 – – – – – – V Values typ. max. Unit Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 125 – – MHz 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 PZTA 63 PZTA 64 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 3 PZTA 63 PZTA 64 Collector-emitter saturation voltage IC = f (VCE sat) hFE = 1000 Base-emitter saturation voltage IC = f (VBE sat) hFE = 1000 Collector cutoff current ICB0 = f (TA) VCE = 30 V Semiconductor Group 4 .


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