PZTA14

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTA14 NPN Darlington transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 14 Philips Semiconductors Product specification NPN Darlington transistor FEATURES High current (max. 500 mA) Low voltage (max. 30 V). APPLICATIONS Pre-amplifiers requiring high input impedance. DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complement: PZTA64. PINNING PIN 1 2, 4 3 base/input collector/output emitter/ground PZTA14 DESCRIPTION handbook, halfpage 4 1 2, 4 TR1 TR2 3 1 Top view 2 3 MAM319 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. 30 30 10 500 800 200 1.25 +150 150 +150 V V V mA mA mA W °C °C °C UNIT 1999 Apr 14 2 Philips Semiconductors Product specification NPN Darl...