PZTA06

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA06 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose transistor FEATURES High current (max. 500 mA) Low voltage (max. 80 V). APPLICATIONS Medium power switching in e.g. telephony and professional communication. handbook, halfpage PZTA06 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. 1 2, 4 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 100 mA; VCE = 1 V IC = 10 mA; VCE = 2 V; f = 100 MHz open emitter open base CONDITIONS − − − − 100 100 MIN. MAX. 80 80 500 1.2 − − MHz V V mA W UNIT 1997 Jul 14 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating am...