PZT3906

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT3906 PNP switching transistor Product specification Supersedes data of 1997 May 27 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS High-speed switching. DESCRIPTION PNP switching transistor in a SOT223 plastic package. NPN complement: PZT3904. handbook, halfpage PZT3906 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −40 −6 −100 −200 −100 1.05 +150 150 +150 V V V mA mA mA W °C °C °C UNIT 1999 Apr 14 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-...