Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PZM-NA series Voltage regulator double diodes
Product specification Supersedes data of 1999 Jun 02 1999 Jun 11
Philips Semiconductors
Product specification
Voltage regulator double diodes
FEATURES • Total power dissipation: max. 220 mW per diode • Small plastic package suitable for surface mounted design • Working voltage: nom. 2.4 V and 15 V (E24 range). APPLICATIONS • General regulation functions. DESCRIPTION Low power general purpose voltage regulator double diodes in a SOT346 (SC59) plastic package, suitable for surface mounted design.
handbook, halfpage
PZM-NA series
PINNING PIN 1 2 3 cathode cathode anode DESCRIPTION
3
3 1 2
1 Top view
2
MAM407
Fig.1
Simplified outline (SOT346; SC59) and symbol.
MARKING TYPE NUMBER PZM2.4NBA PZM2.7NB2A PZM3.0NB2A PZM3.3NB2A PZM3.6NB2A PZM3.9NB2A PZM4.3NB2A PZM4.7NB2A PZM5.1NB2A PZM5.6NB2A MARKING CODE 2A4 2A7 3A0 3A3 3A6 3A9 4A3 4A7 5A1 5A6 TYPE NUMBER PZM6.2NB2A PZM6.8NB2A PZM7.5NB2A PZM8.2NB2A PZM9.1NB2A PZM10NB2A PZM11NB2A PZM12NB2A PZM13NB2A PZM15NB2A MARKING CODE 6A2 6A8 7A5 8A2 9A1 10A 11A 12A 13A 15A
1999 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode IF IZSM P Tstg Tj Note 1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Notes 1. Solderpoint of cathode tab. 2. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm. PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS one diode loaded; note 1 one diode loaded; note 2 continuous forward current non-repetitive peak current power dissipation; see note 1 storage temperature operating junction temperature tp = 100 µs; square wave Tamb = 25 °C − −65 − − PARAMETER CONDITIONS MIN.
PZM-NA series
MAX.
UNIT
200 see Table 1 220 +150 150
mA mW °C °C
VALUE 350 560
UNIT K/W K/W
1999 Jun 11
3
Philips Semiconductors
Product specification
Voltage regulator double diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current PZM2.4NBA PZM2.7NB2A PZM3.0NB2A PZM3.3NB2A PZM3.6NB2A PZM3.9NB2A PZM4.3NB2A PZM4.7NB2A PZM5.1NB2A PZM5.6NB2A PZM6.2NB2A PZM6.8NB2A PZM7.5NB2A PZM8.2NB2A PZM9.1NB2A PZM10NB2A PZM11NB2A PZM12NB2A PZM13NB2A PZM15NB2A VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1.5 V VR = 2.5 V VR = 3.0 V VR = 3.5 V VR = 4.0 V VR = 5.0 V VR = 6.0 V VR = 7.0 V VR = 8.0 V VR = 9.0 V VR = 10.0 V VR = 11.0 V CONDITIONS IF = 10 mA; see Fig.2 IF = 100 mA; see Fig.2
PZM-NA series
MAX. 0.9 1.1 50 20 10 5 5 3 3 3 3 2 2 2 1 700 500 200 100 100 100 70 V V
UNIT
µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA
1999 Jun 11
4
Philips Semiconductors
Product specification
Voltage regulator double diodes
Table 1 Per type; PZM2.4N to PZM24N Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZ = 5 mA; tm = 40 ms; Tamb = 25 °C MIN. 2.4NBA 2.7NB2A 3.0NB2A 3.3NB2A 3.6NB2A 3.9NB2A 4.3NB2A 4.7NB2A 5.1NB2A 5.6NB2A 6.2NB2A 6.8NB2A 7.5NB2A 8.2NB2A 9.1NB2A 10NB2A 11NB2A 12NB2A 13NB2A 15NB2A 2.30 2.65 2.95 3.25 3.55 3.87 4.15 4.55 4.98 5.49 6.06 6.65 7.28 8.02 8.85 9.77 10.76 11.74 12.91 14.34 MAX. 2.60 2.90 3.20 3.50 3.80 4.10 4.34 4.75 5.20 5.73 6.33 6.93 7.60 8.36 9.23 10.21 11.22 12.24 13.49 14.98 DIFFERENTIAL RESISTANCE rdif (Ω) IZ = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 15 20 20 20 25 25 25 25 MAX. 400 450 500 500 500 500 600 500 480 400 150 80 80 80 100 150 150 150 170 200 IZ = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 2 2 2 2 2 2 2 3 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 10 10 10 10 10 10 10 15 TEMP. COEFF. SZ (mV/K) at IZ = 5 mA TYP. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4
PZM-NA series
PZM -XXX
DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 MAX. 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 110 105 105 100
NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs MAX. 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 8.00 3.50 3.50 3.50 3.50 3.00 3.00 2.50 2.00
1999 Jun 11
5
Philips Semiconductors
Product specification
Voltage regulator double diodes
GRAPHICAL DATA
PZM-NA series
MBG781
MBG783
handbook, halfpage
300
handbook, halfpage
0
IF (mA) 200
SZ (mV/K) −1
4V3
3V9 3V6
100
−2
3V3 3V0 2V4 2V7
0 0.6
0.8
VF (V)
1.0
−3
0
20
40
IZ (mA)
60
Tj = 25 °C.
PZM2.4NBA to PZM4.3NB2A. Tj = 25 °C to 150 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Temperature coefficient as a function of working current; typical values.
MBG782
handbook, halfpage
10
12 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8
handbook, halfpage
300
MDA988
P (mW) 200 6V2 5V6 5V1 4V7 100
0
−5
0
4
8
12
16
IZ (mA)
20
0 0 50 100 200 1.