PXTA42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES Low current (max. 100 mA) High voltage (max. 300 V). APPLICATIONS Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complement: PXTA92. MARKING TYPE NUMBER PXTA42 MARKING CODE p1D 1 Bottom view 2 3 MAM296 PXTA42 PINNING PIN 1 2 3 emitter collector base DESCRIPTION handbook, halfpage 2 3 1 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 300 300 6 100 200 100 1.3 +150 150 +150 V V V mA mA mA W °C °C °C UNIT 1999 Apr 26 2 Philips Semiconductors Product specificatio...