PXTA27

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA27 NPN Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN Darlington transistor FEATURES High current (max. 0.5 A) Low voltage (max. 60 V). APPLICATIONS High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PINNING PIN 1 2 3 emitter collector base PXTA27 DESCRIPTION handbook, halfpage 3 2 TR1 MARKING TYPE NUMBER PXTA27 MARKING CODE A27 1 Bottom view 2 3 TR2 1 MAM300 Fig.1 Simplified outline (SOT89) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V IC = 100 mA; VCE = 5 V IC = 30 mA; VCE = 5 V; f = 100 MHz VBE = 0 CONDITIONS open emitter − − − − 10000 10000 125 MIN. MAX. 60 60 0.5 1.3 − − − MHz V V A W UNIT 1997 May 14 2 Philips Semiconductors Product specification NPN Darlington transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature o...