Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXTA14 NPN Darlington transistor
Product specification Supersedes data of 1997 Apr 23 1999 Apr 14
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complement: PXTA64. MARKING TYPE NUMBER PXTA14 MARKING CODE p1N
handbook, halfpage
PXTA14
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
3
2
TR1 TR2 1
MAM300
1 Bottom view
2
3
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter VBE = 0 open collector − − − − − − − −65 − −65 MIN. MAX. 30 30 10 500 1 200 1.3 +150 150 +150 V V V mA A mA W °C °C °C UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN Darlington transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to solder point CONDITIONS note 1 VALUE 96 16
PXTA14
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE VCEsat VBEsat VBEon fT PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V VBE = 0; VCE = 30 V IC = 0; VEB = 10 V IC = 10 mA; VCE = 5 V; (see Fig.2) IC = 100 mA; VCE = 5 V; (see Fig.2) collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA base-emitter saturation voltage base-emitter on-state voltage transition frequency IC = 100 mA; IB = 0.1 mA IC = 100 mA; VCE = 5 V IC = 30 mA; VCE = 5 V; f = 100 MHz − − − 10000 20000 − − − 125 MIN. MAX. 100 100 100 − − 1.5 1.5 2 − V V V MHz UNIT nA nA nA
1999 Apr 14
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Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA14
handbook, full pagewidth
80000 hFE
MGD837
60000
40000
20000
0 10−1
1
10
102
IC (mA)
103
VCE = 2 V.
Fig.2 DC current gain; typical values.
1999 Apr 14
4
Philips Semiconductors
Product specification
NPN Darlington transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
PXTA14
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
w M
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 14
5
Philips Semiconductors
Product specification
NPN Darlington transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PXTA14
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 14
6
Philips Semiconductors
Product specification
NPN Darlington transistor
NOTES
PXTA14
1999 Apr 14
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Philips Semiconductors – a worldwide company
Argentina: see South America Aus.