DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXT3906 PNP switching transistor
Product specification Supers...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXT3906
PNP switching
transistor
Product specification Supersedes data of 1997 May 05 1999 Apr 14
Philips Semiconductors
Product specification
PNP switching
transistor
FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS High-speed saturated switching applications. DESCRIPTION
PNP switching
transistor in a SOT89 plastic package.
NPN complement: PXT3904. MARKING TYPE NUMBER PXT3906 MARKING CODE p2A
1 Bottom view 2 3
MAM297
PXT3906
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
handbook, halfpage
2 3 1
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −55 − −55 MIN. MAX. −40 −40 −6 −100 −200 −100 1.2 +150 150 +150 V V V mA mA mA W °C °C °C UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
PNP swi...