PVB42004X

DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage PVB42004X PINNING - SOT445A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 APPLICATIONS Intended for use in common base class-B power amplifiers up to 4.2 GHz. 3 2 3 c b e MAM251 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange. Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-B test circuit. MODE OF OPERATION f (GHz) 1 Class-B (CW) 2 3 4 VCC (V) 24 24 24 24 PL (W) typ. 13 typ. 10 typ. 7.5 typ. 4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispo...