DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMH2 NPN resistor-equipped double transistor
Product specifi...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMH2
NPN resistor-equipped double
transistor
Product specification 1999 Aug 03
Philips Semiconductors
Product specification
NPN resistor-equipped double
transistor
FEATURES
Transistors with built-in bias resistors R1 and R2 (typ. 47 kΩ each) No mutual interference between the
transistors Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION
NPN resistor-equipped double
transistor in an SC-88 (SOT363) plastic package. MARKING TYPE NUMBER PUMH2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING CODE 2tH
2, 5 1, 4
MBK120
PUMH2
handbook, halfpage
6 5 4 R1 TR1 R2
5
4
6
R2 TR2 R1
1 Top view
2
3
MAM342
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
6, 3
Fig.2 Equivalent inverter symbol.
1999 Aug 03
2
Philips Semiconductors
Product specification
NPN resistor-equipped double
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per
transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Refer to SC-88 standard mounting conditions. total power dissipation Tamb ≤ 25 °C; note 1 − 300 output cur...