PUMB3

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMB3 PNP resistor-equipped double transistor; R1 = 4.7 kΩ Product specification 2001 Sep 19 Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ FEATURES Transistors with built-in bias resistor R1 (typ. 4.7 kΩ) No mutual interference between the transistors Simplification of circuit design Reduces number of components and board space. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package. 1 2 3 MAM344 PUMB3 QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 PARAMETER collector-emitter voltage peak collector current PNP PNP bias resistor MAX. −50 −100 − − 4.7 UNIT V mA − − kΩ handbook, halfpage 6 5 4 R1 TR1 5 4 6 TR2 R1 MARKING TYPE NUMBER PUMB3 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING CODE(1) Top view 1 2 3 B5* Fig.1 Simplified outline (SC-88; SOT363) and symbol. 2, 5 1, 4 MBK120 6, 3 Fig.2 Equivalent inverter symbol. 2001 Sep 19 2 Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitt...