PUB4701

Power Transistor Arrays (F-MOS FETs) PUB4701 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive unit: mm s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 1.65±0.2 9.5±0.2 8.0 25.3±0.2 4.0±0.2 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25 0.8±0.25 0.5±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 150 ±20 ±6 ±12 22.5 15 3.5 150 −55 to +150 Unit V V A A mJ W °C °C C1.5±0.5 1 2 3 4 5 6 7 8 9 10 G: Gate D: Drain S: Source 10-Lead Plastic SIL Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 5mH, IL = 3A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) VGS = 10V, ID = 3A VDD = 100V, RL = 33.3Ω Conditions VDS = 120V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 3A VGS = 4V, ID = 3A VDS = 10V, ID = 3A IDR = 3...