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PTF210901E

Part Number	PTF210901E
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
Published	Apr 16, 2005
Detailed Description	PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched...
Datasheet	PTF210901E PDF File

Overview

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.
0 dB, 3.
84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency Features • • Internal matching for wideband performance Typical two–carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P–1dB = 10...

Similar Datasheet

PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz - Infineon Technologies AG
PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz - Infineon Technologies AG

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