PTF210901

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency Features Internal matching for wideband performance Typical two–carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P–1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power -30 Efficiency (%), Gain (dB) IMD (dBc), ACPR (dBc) Output Power, Avg. (dBm) PTF210901E Package 30248 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, P OUT = 19 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD G...