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PTF180601C Dataheets PDF



Part Number PTF180601C
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
Datasheet PTF180601C DatasheetPTF180601C Datasheet (PDF)

PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Performance EVM & Efficiency vs. Power Output VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz 4 40 Features • • Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 d.

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PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Performance EVM & Efficiency vs. Power Output VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz 4 40 Features • • Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P–1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power • EVM RMS (Average %).. • 3 Efficiency 30 Efficiency (%) • • • 2 20 1 EVM 0 35 37 39 41 43 45 10 0 PTF180601C Package 21248 PTF180601E Package 30248 Output Power (dBm) ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 800 mA, P OUT = 22 W, f = 1989.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gps η D Min — — — — — Typ 1.7 –60 –73 16.5 32 Max — — — — — Units % dBc dBc dB % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 Symbol Gps η D IMD Min 15 30 — Typ 16.5 35 –30 Max — — –28 Units dB % dBc 2004-05-03 PTF180601 Electrical Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 800 mA VGS = 10 V, V DS = 0 V Symbol V(BR)DSS IDSS RDS(on) VGS IGSS Min 65 — — 2.5 — Typ — — 0.135 3.2 0.01 Max — 1.0 — 4.0 1.0 Units V µA Ω V µA Maximum Ratings Parameter Drain–Source Voltage Gate–Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 60 W CW) PTF180601C PTF180601E TSTG RθJC PTF180601E PD PTF180601C Symbol VDSS VGS TJ PD Value 65 –0.5 to +12 200 159 0.91 180 1.03 –40 to +150 1.1 0.97 Unit V V °C W W/°C W W/°C °C °C/W °C/W Data Sheet 2 2004-05-03 PTF180601 Typical Performance (measurements taken in production test fixture, at TCASE = 25°C unless otherwise indicated) EDGE EVM Performance at 26 V VDD = 26 V, IDQ = 0.8 A, f = 1989.8 MHz 5 50 40 Efficiency EDGE Modulation Spectrum Performance Mod Spectrum vs. Power Output VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz -55 50 40 400 KHz Efficiency 30 20 10 600 KHz -80 35 37 39 41 43 45 0 EVM RMS (Average %).. 4 3 2 1 EVM 0 35 37 39 41 43 45 Modulation Spectrum (dB) -60 -65 -70 -75 Efficiency (%) 30 20 10 0 Output Power (dBm) Output Power (dBm) EVM & Modulation Spectrum Performance f = 1989.8 MHz, Output Power = 22 W 8 -40 400 KHz Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 0.8 A, f = 1990 MHz 18 70 60 Gain Modulation Spectrum (dB) EVM RMS (Average %) . 7 6 5 4 3 2 1 0.0 0.2 0.4 0.6 0.8 1.0 EVM -50 -60 17 16 600 KHz -70 -80 -90 -100 -110 1.4 15 14 Efficiency 13 12 11 30 35 40 45 50 40 30 20 10 0 1.2 Quiscent Drain Current (A) Output Power (dBm) Data Sheet 3 2004-05-03 Efficiency (%) 50 Gain (dB) Efficiency (%) PTF180601 Typical Performance (cont.) Output Power, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 0.8 A 19 Efficiency Output Pow er 17 Gain 45 55 Power Gain vs. Output Power VDD = 28 V, f = 1990 MHz 18 IDQ = 1.0 A Power Gain (dB) 50 Output Power (dBm), Efficiency (%) 18 Gain (dB) 17 IDQ = 800 mA IDQ = 600 mA 16 16 40 15 1900 1920 1940 1960 1980 2000 35 2020 15 0 1 10 100 Frequency (MHz) Output Power (W) Broadband Test Fixture Performance VDD = 28 V, IDQ = 0.8 A, POUT = 60 W 20 70 Broadband Test Fixture Performance VDD = 28 V, IDQ = 0.8 A, POUT = 10 W 20 30 Gain 27 Gain (dB), Return Loss (dB) Gain (dB), Return Loss (dB) 15 10 5 0 -5 -10 -15 Gain 15 10 5 0 -5 -10 -15 Efficiency (%) 21 18 Efficiency 15 12 9 Return Loss 6 2020 50 Efficiency 40 Return Loss -20 1900 1930 1960 1990 30 2020 -20 1900 1930 1960 1990 Frequency (MHz) Frequency (MHz) Data Sheet 4 2004-05-03 Efficiency (%) 60 24 PTF180601 Typical Performance (cont.) Output Power vs. Supply Voltage IDQ = 0.8 A, f = 1990 MHz 50 Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 0.8 A, F1 = 1990 MHz, F2 = 1991 MHz -20 -30 Output Power (dBm) 49 IMD (dBc) 48 4.


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