Document
PTF180601
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.
EDGE EVM Performance EVM & Efficiency vs. Power Output
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
4 40
Features
• • Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P–1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
•
EVM RMS (Average %)..
•
3 Efficiency 30
Efficiency (%)
• • •
2
20
1 EVM 0 35 37 39 41 43 45
10
0
PTF180601C Package 21248 PTF180601E Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, P OUT = 22 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps η D
Min
— — — — —
Typ
1.7 –60 –73 16.5 32
Max
— — — — —
Units
% dBc dBc dB %
Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps η D IMD
Min
15 30 —
Typ
16.5 35 –30
Max
— — –28
Units
dB % dBc 2004-05-03
PTF180601
Electrical Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 800 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 — — 2.5 —
Typ
— — 0.135 3.2 0.01
Max
— 1.0 — 4.0 1.0
Units
V µA Ω V µA
Maximum Ratings
Parameter
Drain–Source Voltage Gate–Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C, 60 W CW) PTF180601C PTF180601E TSTG RθJC PTF180601E PD PTF180601C
Symbol
VDSS VGS TJ PD
Value
65 –0.5 to +12 200 159 0.91 180 1.03 –40 to +150 1.1 0.97
Unit
V V °C W W/°C W W/°C °C °C/W °C/W
Data Sheet
2
2004-05-03
PTF180601
Typical Performance (measurements taken in production test fixture, at TCASE = 25°C unless otherwise indicated)
EDGE EVM Performance at 26 V
VDD = 26 V, IDQ = 0.8 A, f = 1989.8 MHz
5 50 40 Efficiency
EDGE Modulation Spectrum Performance Mod Spectrum vs. Power Output
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
-55 50 40 400 KHz Efficiency 30 20 10 600 KHz -80 35 37 39 41 43 45 0
EVM RMS (Average %)..
4 3 2 1 EVM 0 35 37 39 41 43 45
Modulation Spectrum (dB)
-60 -65 -70 -75
Efficiency (%)
30 20 10 0
Output Power (dBm)
Output Power (dBm)
EVM & Modulation Spectrum Performance
f = 1989.8 MHz, Output Power = 22 W
8 -40 400 KHz
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.8 A, f = 1990 MHz
18 70 60 Gain
Modulation Spectrum (dB)
EVM RMS (Average %) .
7 6 5 4 3 2 1 0.0 0.2 0.4 0.6 0.8 1.0 EVM
-50 -60
17 16
600 KHz
-70 -80 -90 -100 -110 1.4
15 14 Efficiency 13 12 11 30 35 40 45 50
40 30 20 10 0
1.2
Quiscent Drain Current (A)
Output Power (dBm)
Data Sheet
3
2004-05-03
Efficiency (%)
50
Gain (dB)
Efficiency (%)
PTF180601
Typical Performance (cont.)
Output Power, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 0.8 A
19 Efficiency Output Pow er 17 Gain 45 55
Power Gain vs. Output Power
VDD = 28 V, f = 1990 MHz
18
IDQ = 1.0 A Power Gain (dB)
50 Output Power (dBm), Efficiency (%)
18 Gain (dB)
17
IDQ = 800 mA IDQ = 600 mA
16
16
40
15 1900
1920
1940
1960
1980
2000
35 2020
15 0 1 10 100
Frequency (MHz)
Output Power (W)
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.8 A, POUT = 60 W
20 70
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.8 A, POUT = 10 W
20 30 Gain 27
Gain (dB), Return Loss (dB)
Gain (dB), Return Loss (dB)
15 10 5 0 -5 -10 -15
Gain
15 10 5 0 -5 -10 -15
Efficiency (%)
21 18 Efficiency 15 12 9 Return Loss 6 2020
50 Efficiency 40
Return Loss -20 1900 1930
1960
1990
30 2020
-20 1900
1930
1960
1990
Frequency (MHz)
Frequency (MHz)
Data Sheet
4
2004-05-03
Efficiency (%)
60
24
PTF180601
Typical Performance (cont.)
Output Power vs. Supply Voltage
IDQ = 0.8 A, f = 1990 MHz
50
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 0.8 A, F1 = 1990 MHz, F2 = 1991 MHz
-20 -30
Output Power (dBm)
49
IMD (dBc)
48 4.