LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101
LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz
Description
The...
PTF180101
LDMOS RF Power Field Effect
Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.
Features
Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = –45 dBc Typical CW performance - Output power at P–1dB = 15 W - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power PTF180101S Package 32259
EDGE EVM Performance EVM and Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
4 40 Efficiency 3 30
EVM RMS (Average %) x
Efficiency (%)
2
20
1 EVM 0 25 30 35 40
10
0
Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gp...