PTF180101

PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = –45 dBc Typical CW performance - Output power at P–1dB = 15 W - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power PTF180101S Package 32259 EDGE EVM Performance EVM and Efficiency vs. Output Power VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz 4 40 Efficiency 3 30 EVM RMS (Average %) x Efficiency (%) 2 20 1 EVM 0 25 30 35 40 10 0 Output Power (dBm) ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gp...