PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10160 is an internally matched 85–...
PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect
Transistor
Description
The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
Typical Output Power& Efficiency vs. Input Power
120 100 70 60 Efficiency 80 60 40 20 Output Power 0 0 1 2 3 4 5
Output Power (Watts)
40
Efficiency (%)
50
VDD = 26 V IDQ = 700 mA f = 960 MHz
30 20 10 0
1234 5600 55A
1016 0
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 700 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gpe P-1dB h Y
Min
15 85 50 —
Typ
16 90 53 —
Max
— — — 5:1
Units
dB Watts % —
e
1
PTF 10160
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 — 3.0 —
Typ
— — — 3.0
...