PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10139 is a GOLDMOS FET intended fo...
PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect
Transistor
Description
The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Available in Package 20256 as PTF 10138
Typical Output Power & Efficiency vs. Input Power
70 Output Power 60 70 Drain Efficiency (%) X 60 Efficiency 50 40 80
Output Power (Watts)
50 40 30 20 10 0 0 1 2 3 4
A-1 234 561 199
101
e
39
Package 20251
VDD = 28 V IDQ = 500 mA f = 960 MHz
30 20 10
Input Power (Watts)
Also available in Package 20256
e
A-12
1013 3456 8
2700
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
11.5 60 50 —
Typ
12.5 — 55 —
Max
— — — 10:1
Unit...