PTF10137

PTF 10137 12 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 20 Efficiency (%) 80 Output Power (Watts) 15 60 VDD = 28 V 10 Efficiency IDQ = 160 mA f = 960 MHz Output Power (W) 40 A-1 234 101 37 5 699 42 5 20 0 0.0 0.2 0.4 0.6 0 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB h Y Min 16.5 12 55 — Typ 18 15 60 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10137 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Cu...