PTF10133

PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 120 Efficiency 60 50 40 Output Power (Watts) 100 80 60 40 20 Output Pow er 0 0 1 2 3 4 5 6 Efficiency (%) VDD = 28.0 V IDQ = 1.0 A f = 894 MHz 30 20 10 0 A-12 3456 9947 1013 3 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.0 A, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB h Y Min 12.5 85 45 — Typ 13.5 90 50 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10133 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forwa...