PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10133 is an internally matched 85 w...
PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect
Transistor
Description
The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability.
INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
Typical Output Power vs. Input Power
120 Efficiency 60 50 40
Output Power (Watts)
100 80 60 40 20 Output Pow er 0 0 1 2 3 4 5 6
Efficiency (%)
VDD = 28.0 V IDQ = 1.0 A f = 894 MHz
30 20 10 0
A-12 3456 9947
1013 3
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.0 A, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
12.5 85 45 —
Typ
13.5 90 50 —
Max
— — — 10:1
Units
dB Watts % —
e
1
PTF 10133
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forwa...