PTF10125

PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 200 180 Output Power (Watts) 160 140 120 100 80 60 40 20 0 0 3 6 9 12 15 A-12 101 3456 25 9 VDD = 28 V IDQ = 1.3 A Total f = 1500 MHz 935 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 1.50, 1.55 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.3 A Total, f = 1.50, 1.55 GHz) Drain Efficiency (VDD = 28 V, POUT = 135 W, IDQ = 1.3 A Total, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 67.5 W, IDQ = 1.3 A Total, f = 1.5 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps Min 11.5 Typ 12.5 Max — Units dB P-1dB hD Y 135 35 — 150 40 — — — 10:1 Watts % — e 1 PTF 10125 Electrical Characteristics Characterist...