PTF10120

PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 150 100 Output Power (Watts) 120 Output Power 90 Efficiency 60 80 Efficiency (%) 60 A-12 101 345 698 20 49 40 VDD = 28 V 30 IDQ = 1.2 A Total f = 1990 MHz 0 3 6 9 12 15 18 20 0 0 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 1.2 A Total, f = 1.99 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB hD Y Min 10 120 — — Typ 11 — 40 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10120 Electrical Characteristics Characteri...