PTF10052

PTF 10052 35 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Available in Package 20222 as PTF 10007 Typical Output Power & Efficiency vs. Input Power 50 40 Output Pow er (W) Ef ficiency (%) 100 80 60 40 20 0 0 1 2 3 Package 20235 Efficiency B-1 234 100 52 56 991 Output Power 6 30 20 10 0 VDD = 28 V IDQ = 300 m A f = 960 MHz A-12 1000 3456 9725 7 Package 20222 Input Power (Watts) RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB h Y Min 12.0 35 50 — Typ 13.5 — 55 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10052 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(B...