PTF 10045 30 Watts, 1.60–1.65 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10045 is a common source N-channe...
PTF 10045 30 Watts, 1.60–1.65 GHz GOLDMOS™ Field Effect
Transistor
Description
The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. Performance at 1650 MHz, 28 Volts - Output Power = 30 Watts - Power Gain = 11.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability
Typical Output Power and Efficiency vs. Input Power
40 60
Output Power (Watts)
Output Power 20 40
Efficiency (%)
30
Efficiency
50
A -1 2
1004 5
3456 9955
VDD = 28V
10
IDQ = 380 mA f = 1650 MHz
0 1 2 3 4
30
0
20
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Thermal Resistance (Tflange = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 ±20 200 120 0.7 150 1.4
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10045
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 — 3.0 —
Typ
...
