PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10043 is an internally matched GOL...
PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect
Transistor
Description
The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
Typical Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0.0 0.2 0.4 0.6 0.8 1.0
A-12
100
3456
9834
43
VDD = 26 V IDQ = 150 mA f = 2.0 GHz
Input Power (Watts)
Package 20222
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 3 W, IDQ = 150 mA, f = 1.93, 2.0 GHz) Power Output at 1 dB Compressed (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps p-1dB hD Y
Min
11 12 40 —
Typ
12 14 45 —
Max
— — — 10:1
Units
dB Watts % —
e
1
PTF 10043
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th...