PTF080451E

PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45 40 35 400 kHz 600 kHz 30 25 20 15 10 36 38 40 42 44 46 48 50 Modulation Spectrum (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 Drain Efficiency (%) Output Power (dBm) PTF080451E Package 30265 ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, P OUT = 22.5 W, f = 959.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gps Min — — — — — Typ 2.0 –62 –76 18 40 Max — — — — — Units % dBc dBc...