PTB23005X

DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistors FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Multicell geometry gives good balance of dissipated power and low thermal resistance Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. olumns PTB23001X; PTB23003X; PTB23005X PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 2 Top view MAM131 e MARKING TYPE NUMBER PTB23001X PTB23003X PTB23005X MARKING CODE 2301X 2303X 2305X Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. TYPE NUMBER PTB23001X PTB23003X PTB23005X MODE OF OPERATION CW CW CW 2 2 2 f (GHz) 24 24 24 VCC (V) ≥1 ≥3 ≥5 WARNING1 Product and environmental safety - toxic materials This product contains beryllium oxide. The p...