DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D031
PTB23003X NPN microwave power transistor
Product specifi...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D031
PTB23003X
NPN microwave power
transistor
Product specification Supersedes data of 1997 Feb 19 1997 Nov 13
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Multicell geometry gives good balance of dissipated power and low thermal resistance Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz.
3
PTB23003X
PINNING - SOT440A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION
olumns
1 c
b
e
MAM131
DESCRIPTION
Top view
2
NPN silicon planar epitaxial microwave power
transistor in a metal ceramic SOT440A flange package with base connected to the flange.
Marking code: 2303X.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit. MODE OF OPERATION CW f (GHz) 2 VCC (V) 24 PL (W) ≥3 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary ...