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PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor
Description
The 20219 is a class AB, NPN common emi...
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PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power
Transistor
Description
The 20219 is a class AB,
NPN common emitter RF power
transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 70 Watts, 925–960 MHz Class AB Characteristics Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IMD = -30 max. at 50 W(PEP) Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10
Output Power (Watts)
2021 9
LOT COD E
f = 960 MHz VCC = 26 V ICQ = 0.200 A
Input Power (Watts)
Package 20216
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25° C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
40 65 4.0 20 159 0.95 –40 to +150 1.1
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20219
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain
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Conditions
IB = 0 A, IC = 100 mA...