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PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF po...
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PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power
Transistor
Description
The 20189 is an
NPN, common emitter RF power
transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
25 Volt, 900–960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power and Efficiency vs. Input Power
2.0 80
VCC = 25 V
1.5
Output Power (Watts)
ICQ = 175 mA f = 960 MHz
60
1.0
40
Efficiency (%)
201 89
LO TC OD E
0.5
20
0.0 0.00
0.02
0.04
0.06
0.08
0 0.10
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
40 50 4.0 0.5 11 0.063 –40 to +150 16.0
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20189
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Condition...