PTB20180

e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 2.5 Watts, 1.8–2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 Output Power (Watts) 0.8 0.6 0.4 20 18 0 LO TC OD E VCC = 26 V 0.2 0.0 0.00 ICQ = 20 mA f = 2 GHz 0.02 0.04 0.06 0.08 0.10 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.5 10.0 0.057 –40 to +150 17.5 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20180 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(B...