PTB20177

e PTB 20177 150 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 26 Volt, 960 MHz Characteristics - Output Power = 150 Watts (PEP) - Collector Efficiency = 50 Min at 150 Watts - IMD = -28 dBc Max at 150 Watts (PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated • • • Typical Output Power vs. Input Power 200 Output Power (Watts) 160 120 80 201 77 LOT COD E VCC = 26 V 40 0 0 5 10 15 20 25 30 ICQ = 400 mA Total f = 960 MHz Input Power (Watts) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 60 4.0 25.0 330 1.89 –40 to +150 0.53 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20177 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC...