PTB20170

e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 30 Watts, 1.8–2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 Output Power (Watts) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 2017 LOT COD E 0 VCC = 26 V ICQ = 100 mA f = 2.0 GHz Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCES VEBO IC PD Value 55 55 4.0 6.7 123 0.7 –40 to +150 1.43 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20170 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IC = 50 mA, RBE = 27 Ω VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 55 55 4 20 Typ — — 5 50 Max — — — 120 Units Vo...