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PTB20167

60 Watts/ 850-960 MHz RF Power Transistor

Description

e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to...

Ericsson

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