PTB20144

e PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 6 Watts, 915–960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 10 8 6 4 2 0 0.00 Output Power (Watts) VCC = 25 V ICQ = 50 mA f = 960 MHz 20 LO TC O 14 DE 4 0.25 0.50 0.75 1.00 1.25 Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Tstg RθJC Symbol VCER VCBO VEBO IC PD Value 55 60 4.0 1.7 22 0.125 –40 to +150 8 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20144 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VC...