PTB20141

e PTB 20141 18 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 18 Watts, 1.465–1.513 GHz Class AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0 VCC = 23 V ICQ = 50 mA f = 1.501 GHz 201 41 LOT COD E 1 2 3 4 5 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 2.0 51.5 0.29 –40 to +150 3.5 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20141 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 40 mA, RBE = 22 Ω VBE = 0 V, IC = 40 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE ...