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PTB20134

Ericsson
Part Number PTB20134
Manufacturer Ericsson
Description 30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Published Apr 16, 2005
Detailed Description e PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common em...
Datasheet PDF File PTB20134 PDF File

PTB20134
PTB20134

Overview
e PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz.
Rated at 30 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • • • • 30 Watts, 860–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs.
Input Power 50 Output Power (Watts) VCC = 25 V 40 30 20 10 0 0 1 2 3 4 5 ICQ = 100 mA ...


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