PTB20111

e PTB 20111 85 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 25 Volt, 860–900 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated • • • Typical Output Power vs. Input Power 100 80 60 40 Output Power (Watts) 2011 1 LOT COD E VCC = 25 V 20 0 0 4 8 12 16 ICQ = 200 mA f = 900 MHz Input Power (Watts) Package 20216 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 20 159 0.91 –40 to +150 1.1 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20111 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = ...