e
PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor
Description
The 20046 is a class AB, NPN, common em...
e
PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power
Transistor
Description
The 20046 is a class AB,
NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
1 Watt, 1465–1513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride Passivated
200 46
LOT COD E
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Thermal Resistance (Tflange = 70°C) Tstg RθJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 0.7 10 0.057 150 17.5
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20046
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A
Symbol
V(BR)CER V(BR)CES V(BR)EBO hFE
Min
50 50 4 20
Typ
— — 5 50
Max
— — — 120
Units
Volts Volts Volts —
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz) Power Ou...