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PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor
Description
The 20007 is a class AB, NPN, common em...
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PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power
Transistor
Description
The 20007 is a class AB,
NPN, common emitter RF power
transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
30 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
Output Power (Watts)
50 40 30 20 10 0 0 2 4 6 8 10
200 07
LOT CO DE
VCC = 24 V ICQ = 200 mA f = 960 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
40 50 4.0 10 175 1.0 –40 to +150 1.0
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20007
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE
Min
25 55 ...