PTB20006

e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 Output Power (Watts) 10 8 6 4 2 0 0.00 200 06 LOT COD E VCC = 25 V ICQ = 50 A f = 900 MHz 0.15 0.30 0.45 0.60 0.75 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 1.7 35 0.2 –40 to +150 5.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20006 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Mi...