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PTB 20003 4 Watts, 915–960 MHz Cellular Radio RF Power Transistor
Description
The 20003 is a class AB, NPN, common emi...
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PTB 20003 4 Watts, 915–960 MHz Cellular Radio RF Power
Transistor
Description
The 20003 is a class AB,
NPN, common emitter RF power
transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Specified 25 Volts 4 Watts, 915–960 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
12 10 8 6 4 2 0 0.00
Output Power (Watts)
200 03
LOT COD E
VCC = 25 V ICQ = 50 mA f = 960 MHz
0.15 0.30 0.45 0.60 0.75
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
40 50 4.0 1.7 35 0.2 –40 to +150 5.0
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20003
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA
Symbol
V(BR)CEO V(BR...