PT9701
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a Common Emitter Device Designed for Class A , A...
PT9701
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
Gold Metalization Emitter Ballasting High Gain
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO hFE Cob PG ηC IC = 20 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25 45 3.5
UNITS
V V V ---
IC = 200 mA f = 1.0 MHz Pout = 5.0 W f = 400 MHz
15 7.0 10 50 12 55
pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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