PT501/PT510
PT501/PT510
s Features
1. Narrow acceptance ( ∆θ : TYP. ± 6˚ ) 2. TO -18 type standard package 3. With base...
PT501/PT510
PT501/PT510
s Features
1. Narrow acceptance ( ∆θ : TYP. ± 6˚ ) 2. TO -18 type standard package 3. With base terminal : PT510
TO-18 Type Narrow Acceptance Photo
transistor
s Outline Dimensions
φ 4.7± 0.1 Glass lens 6.8MAX. 4.5 6.8MAX. 4.5 PT501
( Unit : mm )
φ 4.7± 0.1 Glass lens PT510
s Applications
1. Optoelectronic switches, optoelectronic counters 2. Smoke detectors 3. Infrared applied systems
φ 0.45 2.5
20.0±1.0
13
φ 0.45
2.5
0
0
3
2
1.
1.
φ 2.5 1
2 1 1.0 45˚ φ 5.7MAX. 1 45˚ 1.0 φ 5.7MAX. 1
1 Collector 2 Emitter 2
2 3
1 Collector (Case ) 2 Base 3 Emitter
s Absolute Maximum Ratings
Parameter Collector-emitter voltage Emitter-collector voltage Collector-base voltage Emitter-base voltage Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO V CBO V EBO PC T opr T stg T sol PT501 45 6 75 - 25 to + 125 - 55 to + 150 260 PT510 35 6 35 6 75 - 25 to + 125 - 55 to + 150 260
( Ta = 25˚C )
Unit V V V V mW ˚C ˚C ˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s Electro-optical Characteristics
Parameter
*2
( Ta = 25˚C )
Symbol IC Conditions VCE = 5V, E e = 10mW/cm2 MIN. 2.5 TYP. PT501 PT510 2 x 10 - 9 0.2 800 PT501 PT510 PT501 PT510 MAX. 10 20 10 10 2 10 3
-7
Unit mA A V nm µs µs
Collector current Collector dark current Collector-emitter saturation voltage Peak sensitivity wavelength Response time Rise time Fall time
*2
VCE = 30V, E e = 0 I CEO VCE (sat...