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PT501

Sharp Electrionic Components

TO-18 Type Narrow Acceptance Phototransistor

PT501/PT510 PT501/PT510 s Features 1. Narrow acceptance ( ∆θ : TYP. ± 6˚ ) 2. TO -18 type standard package 3. With base...


Sharp Electrionic Components

PT501

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Description
PT501/PT510 PT501/PT510 s Features 1. Narrow acceptance ( ∆θ : TYP. ± 6˚ ) 2. TO -18 type standard package 3. With base terminal : PT510 TO-18 Type Narrow Acceptance Phototransistor s Outline Dimensions φ 4.7± 0.1 Glass lens 6.8MAX. 4.5 6.8MAX. 4.5 PT501 ( Unit : mm ) φ 4.7± 0.1 Glass lens PT510 s Applications 1. Optoelectronic switches, optoelectronic counters 2. Smoke detectors 3. Infrared applied systems φ 0.45 2.5 20.0±1.0 13 φ 0.45 2.5 0 0 3 2 1. 1. φ 2.5 1 2 1 1.0 45˚ φ 5.7MAX. 1 45˚ 1.0 φ 5.7MAX. 1 1 Collector 2 Emitter 2 2 3 1 Collector (Case ) 2 Base 3 Emitter s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-base voltage Emitter-base voltage Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO V CBO V EBO PC T opr T stg T sol PT501 45 6 75 - 25 to + 125 - 55 to + 150 260 PT510 35 6 35 6 75 - 25 to + 125 - 55 to + 150 260 ( Ta = 25˚C ) Unit V V V V mW ˚C ˚C ˚C *1 For 10 seconds at the position of 1.3mm from the bottom face of can package s Electro-optical Characteristics Parameter *2 ( Ta = 25˚C ) Symbol IC Conditions VCE = 5V, E e = 10mW/cm2 MIN. 2.5 TYP. PT501 PT510 2 x 10 - 9 0.2 800 PT501 PT510 PT501 PT510 MAX. 10 20 10 10 2 10 3 -7 Unit mA A V nm µs µs Collector current Collector dark current Collector-emitter saturation voltage Peak sensitivity wavelength Response time Rise time Fall time *2 VCE = 30V, E e = 0 I CEO VCE (sat...




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