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PT480

Sharp Electrionic Components

Narrow Acceptance Phototransistor

PT480/PT480F PT480/PT480F s Features 1. Epoxy resin package 2. Narrow acceptance ( ∆ θ : TYP. ± 13˚ ) 3. Visible light ...


Sharp Electrionic Components

PT480

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Description
PT480/PT480F PT480/PT480F s Features 1. Epoxy resin package 2. Narrow acceptance ( ∆ θ : TYP. ± 13˚ ) 3. Visible light cut-off type : PT480F Narrow Acceptance Phototransistor s Outline Dimensions 1.5 2 - C0.5 Rest of gate 0.3MAX. 3.0 Detector center 1.15 0.75 4.0 R0.5 0.8MAX. 0.15 1.5 0.8MAX. 0.5MIN. 17.5 + - 1.0 ( Unit : mm ) g Epoxy resin R0.8± 0.1 2.95± 0.2 2.15±0.2 1. VCRs, cassette tape recorders 2. Floppy disk drives 3. Optoelectronic switches 4. Automatic stroboscopes 2.54 2 - 0.4 2 - 0.45 2 - 0.8 2 1.6 2.8 1 2 1 Emitter 2 Collector g Epoxy resin PT480 PT480F Transparent resin Visible light cut-off resin (black ) 1 s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 20 75 - 25 to + 85 - 40 to + 85 260 ( Ta = 25˚C ) Unit V V mA mW ˚C ˚C ˚C *1 For 5 seconds at the position of 1.4mm from the bottom face of resin package s Electro-optical Characteristics Parameter *2 Collector PT480 current PT480F Collector dark crrrent *2 Collector-emitter saturation voltage Peak sensitivity PT480 wavelength PT480F Rise time Response time Fall time Symbol IC I CEO Conditions VCE = 5V E e = 1mW/cm2 VCE = 20V, E e = 0 MIN. 0.4 0.25 TYP. 1.7 0.8 10- 9 0.1 800 860 3 3.5 ( Ta = 25˚C ) MAX. 6.0 3.0 10- 7 0.4 Unit mA mA A V nm nm µs µs V CE(sat) I C = 0.5mA, E e = 10mW/cm2 λ...




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