PT480/PT480F
PT480/PT480F
s Features
1. Epoxy resin package 2. Narrow acceptance ( ∆ θ : TYP. ± 13˚ ) 3. Visible light ...
PT480/PT480F
PT480/PT480F
s Features
1. Epoxy resin package 2. Narrow acceptance ( ∆ θ : TYP. ± 13˚ ) 3. Visible light cut-off type : PT480F
Narrow Acceptance Photo
transistor
s Outline Dimensions
1.5 2 - C0.5 Rest of gate 0.3MAX. 3.0 Detector center 1.15 0.75 4.0 R0.5 0.8MAX. 0.15
1.5 0.8MAX. 0.5MIN. 17.5 + - 1.0
( Unit : mm )
g Epoxy resin
R0.8± 0.1
2.95± 0.2 2.15±0.2
1. VCRs, cassette tape recorders 2. Floppy disk drives 3. Optoelectronic switches 4. Automatic stroboscopes
2.54
2 - 0.4
2 - 0.45 2 - 0.8 2
1.6
2.8 1 2
1 Emitter 2 Collector
g Epoxy resin PT480 PT480F Transparent resin
Visible light cut-off resin (black )
1
s Absolute Maximum Ratings
Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 20 75 - 25 to + 85 - 40 to + 85 260
( Ta = 25˚C )
Unit V V mA mW ˚C ˚C ˚C
*1 For 5 seconds at the position of 1.4mm from the bottom face of resin package
s Electro-optical Characteristics
Parameter *2 Collector PT480 current PT480F Collector dark crrrent *2 Collector-emitter saturation voltage Peak sensitivity PT480 wavelength PT480F Rise time Response time Fall time Symbol IC I CEO Conditions VCE = 5V E e = 1mW/cm2 VCE = 20V, E e = 0 MIN. 0.4 0.25 TYP. 1.7 0.8 10- 9 0.1 800 860 3 3.5
( Ta = 25˚C )
MAX. 6.0 3.0 10- 7 0.4 Unit mA mA A V nm nm µs µs
V CE(sat) I C = 0.5mA, E e = 10mW/cm2 λ...