R1800F

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# R1200F THRU R2000F 500 Milliamp High Voltage Fast Recovery Low Cost Low Leakage Low Forward Voltage Drop High Current Capability High Voltage Fast Switching For Higher Efficiency Silicon Rectifier 1200 to 2000 Volts DO-41 Maximum Ratings Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C MCC Catalog Number R1200F R1500F R1800F R2000F Device Marking --------- Maximum Recurrent Peak Reverse Voltage 1200V 1500V 1800V 2000V Maximum RMS Voltage 840V 1050V 1260V 1400V Maximum DC Blocking Voltage 1200V 1500V 1800V 2000V D A Cathode Mark B D Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage R1200F-R1800F R2000F Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Maximum Reverse Recovery Time IF(AV) IFSM 500mA 30A TA = 50°C 8.3ms, half sine DIMENSIONS INCHES MIN .166 .080 .028 1.000 MM MIN 4.10 2.00 .70 25.40 C VF 2.4V 3.0V 5.0µA 50µA 30pF 500nS IFM = 0.5A; TA = 50°C TA = 25°C TA = 100°C Measured at 1.0MHz, VR=4.0V DIM A B C D MAX .205 .107 .034 --- MAX 5.20 2.70 .90 --- NOTE IR CJ Trr www.mccsemi.com R1200F thru R2000F Figure 1 Typical Reverse Characteristics 4 2 1 .8 .6 .4 µA .2 .1 .08 .06 .04 .02 .01 0 TJ = 25°C 100 mA 200 300 400 500 600 MCC Figure 2 Forwa...