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PBYR735X

NXP

Rectifier diodes schottky barrier

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platin...


NXP

PBYR735X

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Description
Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR745X series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) PARAMETER PBYR7Repetitive peak reverse voltage Forward voltage Average forward current MAX. 35X 35 0.57 7.5 MAX. 40X 40 0.57 7.5 MAX. 45X 45 0.57 7.5 UNIT V V A PINNING - SOD113 PIN 1 2 DESCRIPTION cathode anode PIN CONFIGURATION case SYMBOL k 1 a 2 case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IF(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 7.5 10.6 15 100 110 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 128 ˚C Average forward current square wave; δ = 0.5; Ths ≤ 123 ˚C I2t IRRM IRSM Tstg Tj RMS output current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 123 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; ...




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