PBYR3080PT

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR30100PT series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) MAX. 60PT 60 0.7 30 MAX. 80PT 80 0.7 30 MAX. 100PT 100 0.7 30 UNIT V V A PINNING - SOT93 PIN 1 2 3 tab DESCRIPTION Anode 1 (a) Cathode (k) Anode 2 (a) Cathode (k) PIN CONFIGURATION tab SYMBOL a1 a2 k 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -60 60 60 60 MAX. -80 80 80 80 30 43 30 180 200 -100 100 100 100 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 139 ˚C Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. square wave; δ = 0.5; Tmb ≤ 124 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Tmb ≤ 124 ˚C t = 10 ms ...